ScienceDaily: Consumer Electronics News |
| Physicists and chemists work to improve digital memory technology Posted: 24 Nov 2014 11:36 AM PST Researchers are studying graphene and ammonia to develop high-speed, high-capacity random access memory. The team engineered and tested improvements in the performance of a memory structure known as a ferroelectric tunnel junction.  |
| You are subscribed to email updates from Consumer Electronics News -- ScienceDaily To stop receiving these emails, you may unsubscribe now. | Email delivery powered by Google |
| Google Inc., 1600 Amphitheatre Parkway, Mountain View, CA 94043, United States | |
No comments:
Post a Comment